NONVOLATILE MEMORY ELEMENTS HAVING CONDUCTIVE STRUCTURES WITH SEMIMETALS AND/OR SEMICONDUCTORS

A memory element programmable between different impedance states, comprising: a first electrode layer comprising a semimetal or semiconductor (semimetal/semiconductor) and at least one other first electrode element; a second electrode; and a switch layer formed between the first and second electrode...

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Bibliographic Details
Main Authors Koushan Foroozan Sarah, Jameson, III John Ross
Format Patent
LanguageEnglish
Published 01.02.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A memory element programmable between different impedance states, comprising: a first electrode layer comprising a semimetal or semiconductor (semimetal/semiconductor) and at least one other first electrode element; a second electrode; and a switch layer formed between the first and second electrodes and comprising an insulating material; wherein atoms of the semimetal/semiconductor provide a reversible change in conductivity of the switch layer by application of electric fields.
Bibliography:Application Number: US201715650719