METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED SEED END OXYGEN

• Main Authors: Kim Byung Chun, Kwon Doh Hyung, Lee Jong Hak, Ji Jun Hwan, Lee Hyung Min, Ryu Jae Woo, Lee Young Jung
• Format: Patent
• Language: English
• Published: 01.02.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Methods for producing single crystal silicon ingots with a reduced oxygen content toward the seed end of the ingot are disclosed. The methods may involve controlling growth conditions during crown formation and, in some embodiments, controlling the rate of crucible rotation during crown rotation to...