Integrated Structures and Methods of Forming Integrated Structures

• Main Authors: Li Jie, Mathew James, Shrotri Kunal, Yu Hongpeng, Tran Luan C, Lee Minsoo, Haller Gordon A, Zhang Yangda
• Format: Patent
• Language: English
• Published: 21.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride st...