SEMICONDUCTOR STRUCTURE INCLUDING A TRENCH CAPPING LAYER
A semiconductor structure includes a trench isolation structure and a trench capping layer positioned over the trench isolation structure, wherein the trench isolation layer includes a first electrically insulating material and the trench capping layer includes a second electrically insulating mater...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
05.10.2017
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Subjects | |
Online Access | Get full text |
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