SEMICONDUCTOR STRUCTURE INCLUDING A TRENCH CAPPING LAYER

• Main Authors: Smith Elliot John, Sichler Steffen
• Format: Patent
• Language: English
• Published: 05.10.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor structure includes a trench isolation structure and a trench capping layer positioned over the trench isolation structure, wherein the trench isolation layer includes a first electrically insulating material and the trench capping layer includes a second electrically insulating mater...