SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: ONOZAWA Yuichi, SIN Johnny Kin On, YANG Wentao
• Format: Patent
• Language: English
• Published: 31.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside the embedded insulating film, a FP long in a direction of depth is disposed. The FP curves outwardly away from an inner side wall of the trench as a depth from a base front surface increases. At least near a bottom end of the FP, a distance between the FP and the inner side wall of the trench is greater than a width of the groove. The FP is connected to a front surface electrode that extends on the embedded insulating film. As a result, breakdown voltage may be enhanced, adverse effects of the surface charge may be reduced, and chip size may be further reduced.