CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME

• Main Authors: Yang Cheng-Jui, Lan Chung-Wen, Yu Wen-Huai, Su Chan-Lu, Pai Kai-Yuan, Hsu Sung-Lin, Lan Wen-Chieh, Hsu Wen-Ching, Yang Yu-Min, Chiang Yu-Tsung
• Format: Patent
• Language: English
• Published: 17.08.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COMPOUNDS THEREOF; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.