A Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

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Bibliographic Details
Main Author Widjaja Yuniarto
Format Patent
LanguageEnglish
Published 10.08.2017
Subjects
Online AccessGet full text

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