LOCALIZED STRAIN RELIEF FOR AN INTEGRATED CIRCUIT
An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trenc...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
26.01.2017
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trench may surround the circuit component partially or wholly. The trench may be filled with a material having a lower bulk modulus than the semiconductor die in which the trench is formed. |
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Bibliography: | Application Number: US201615288502 |