SEMICONDUCTOR DEVICE
Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a me...
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| Main Authors | , , , , , , , |
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| Format | Patent |
| Language | English |
| Published |
01.12.2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a memory pattern provided between the gate electrodes and the active pillar and between the insulating patterns and the active pillar. The gate electrodes include edge portions extending between the memory pattern and the insulating patterns. |
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| AbstractList | Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a memory pattern provided between the gate electrodes and the active pillar and between the insulating patterns and the active pillar. The gate electrodes include edge portions extending between the memory pattern and the insulating patterns. |
| Author | KANG DAEWOONG KIM DAE SIN SON HOMIN SEOL KWANG SOO LIM SEUNGHYUN LEE CHANGSUB Kim Nambin HUR SUNGHOI |
| Author_xml | – fullname: LEE CHANGSUB – fullname: LIM SEUNGHYUN – fullname: KANG DAEWOONG – fullname: KIM DAE SIN – fullname: HUR SUNGHOI – fullname: SON HOMIN – fullname: Kim Nambin – fullname: SEOL KWANG SOO |
| BookMark | eNrjYmDJy89L5WQQCXb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmxqaGphZGjobGxKkCAMo6IV4 |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US2016351582A1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US2016351582A13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Aug 23 06:56:48 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US2016351582A13 |
| Notes | Application Number: US201615165135 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161201&DB=EPODOC&CC=US&NR=2016351582A1 |
| ParticipantIDs | epo_espacenet_US2016351582A1 |
| PublicationCentury | 2000 |
| PublicationDate | 20161201 |
| PublicationDateYYYYMMDD | 2016-12-01 |
| PublicationDate_xml | – month: 12 year: 2016 text: 20161201 day: 01 |
| PublicationDecade | 2010 |
| PublicationYear | 2016 |
| RelatedCompanies | KANG DAEWOONG KIM DAE SIN SON HOMIN SEOL KWANG SOO LIM SEUNGHYUN LEE CHANGSUB Kim Nambin HUR SUNGHOI |
| RelatedCompanies_xml | – name: LEE CHANGSUB – name: KANG DAEWOONG – name: Kim Nambin – name: SEOL KWANG SOO – name: SON HOMIN – name: LIM SEUNGHYUN – name: HUR SUNGHOI – name: KIM DAE SIN |
| Score | 3.069625 |
| Snippet | Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes,... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161201&DB=EPODOC&locale=&CC=US&NR=2016351582A1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsQBd-W6ZYqlrkWyUomuSnGSum2iWaACMEEuzNDMLS4ukFNCAvq-fmUeoiVeEaQQTQw5sLwz4nNBy8OGIwByVDMzvJeDyugAxiOUCXltZrJ-UCRTKt3cLsXVRg_aOgc0XIKHm4mTrGuDv4u-s5uxsGxqs5hcEljMG1t0WRo7AvhIrqCENOmnfNcwJtC-lALlScRNkYAsAmpdXIsTAlJonzMDpDLt7TZiBwxc65Q1kQnNfsQiDSDAo0Pz9XEKdQ_yDFFxcwzydXUUZlN1cQ5w9dIHGx8N9Ex8ajOwWYzEGFmA_P1WCQQF08pxpmmlqmrE5sM9kkmqRmJqaZm4JbCMlGaSmGJpLMsjgM0kKv7Q0AxeIC1mJIcPAUlJUmioLrE9LkuTAwQAAj5h06Q |
| link.rule.ids | 230,309,786,891,25594,76903 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsQBd-W6ZYqlrkWyUomuSnGSum2iWaACMEEuzNDMLS4ukFNCAvq-fmUeoiVeEaQQTQw5sLwz4nNBy8OGIwByVDMzvJeDyugAxiOUCXltZrJ-UCRTKt3cLsXVRg_aOgc0XIKHm4mTrGuDv4u-s5uxsGxqs5hcEljMG1t0WRo7AvhKrObBTCO4shTmB9qUUIFcqboIMbAFA8_JKhBiYUvOEGTidYXevCTNw-EKnvIFMaO4rFmEQCQYFmr-fS6hziH-QgotrmKezqyiDsptriLOHLtD4eLhv4kODkd1iLMbAAuznp0owKIBOnjNNM01NMzYH9plMUi0SU1PTzC2BbaQkg9QUQ3NJBhl8Jknhl5Zn4PQI8fWJ9_H085Zm4AJJQVZlyDCwlBSVpsoC69aSJDlwkAAAK9530w |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE&rft.inventor=LEE+CHANGSUB&rft.inventor=LIM+SEUNGHYUN&rft.inventor=KANG+DAEWOONG&rft.inventor=KIM+DAE+SIN&rft.inventor=HUR+SUNGHOI&rft.inventor=SON+HOMIN&rft.inventor=Kim+Nambin&rft.inventor=SEOL+KWANG+SOO&rft.date=2016-12-01&rft.externalDBID=A1&rft.externalDocID=US2016351582A1 |