SEMICONDUCTOR DEVICE

Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a me...

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Bibliographic Details
Main Authors LEE CHANGSUB, LIM SEUNGHYUN, KANG DAEWOONG, KIM DAE SIN, HUR SUNGHOI, SON HOMIN, Kim Nambin, SEOL KWANG SOO
Format Patent
LanguageEnglish
Published 01.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a memory pattern provided between the gate electrodes and the active pillar and between the insulating patterns and the active pillar. The gate electrodes include edge portions extending between the memory pattern and the insulating patterns.
Bibliography:Application Number: US201615165135