READ VOLTAGE LEVEL ESTIMATING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT

A read voltage level estimating method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first region of a rewritable non-volatile memory module according to a first read voltage level to obtain a first encoding unit which belongs to a block code...

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Bibliographic Details
Main Authors Wang Tien-Ching, Lai Kuo-Hsin, Lin Wei
Format Patent
LanguageEnglish
Published 20.10.2016
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A read voltage level estimating method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first region of a rewritable non-volatile memory module according to a first read voltage level to obtain a first encoding unit which belongs to a block code; performing a first decoding procedure on the first encoding unit and recording first decoding information; reading the first region according to a second read voltage level to obtain a second encoding unit which belongs to the block code; performing a second decoding procedure on the second encoding unit and recording second decoding information; and estimating and obtaining a third read voltage level according to the first decoding information and the second decoding information. Accordingly, a management ability of the rewritable non-volatile memory module adopting the block code may be improved.
Bibliography:Application Number: US201514745472