3D MEMORY

Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, eac...

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Main Authors FAN DARWIN FRANSEDA, HOPKINS JOHN, JAYANTI SRIKANT, SIMSEK-EGE FATMA ARZUM, BRIGHTEN JAMES, MAURI AURELIO GIANCARLO
Format Patent
LanguageEnglish
Published 12.05.2016
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Abstract Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.
AbstractList Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.
Author HOPKINS JOHN
SIMSEK-EGE FATMA ARZUM
MAURI AURELIO GIANCARLO
FAN DARWIN FRANSEDA
JAYANTI SRIKANT
BRIGHTEN JAMES
Author_xml – fullname: FAN DARWIN FRANSEDA
– fullname: HOPKINS JOHN
– fullname: JAYANTI SRIKANT
– fullname: SIMSEK-EGE FATMA ARZUM
– fullname: BRIGHTEN JAMES
– fullname: MAURI AURELIO GIANCARLO
BookMark eNrjYmDJy89L5WTgNHZR8HX19Q-K5GFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGZobGxuamRo6GxsSpAgBUbx4O
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2016133752A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2016133752A13
IEDL.DBID EVB
IngestDate Fri Aug 23 06:54:33 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2016133752A13
Notes Application Number: US201614987147
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160512&DB=EPODOC&CC=US&NR=2016133752A1
ParticipantIDs epo_espacenet_US2016133752A1
PublicationCentury 2000
PublicationDate 20160512
PublicationDateYYYYMMDD 2016-05-12
PublicationDate_xml – month: 05
  year: 2016
  text: 20160512
  day: 12
PublicationDecade 2010
PublicationYear 2016
RelatedCompanies MICRON TECHNOLOGY, INC
RelatedCompanies_xml – name: MICRON TECHNOLOGY, INC
Score 3.0328598
Snippet Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title 3D MEMORY
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160512&DB=EPODOC&locale=&CC=US&NR=2016133752A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSUpOSzQ0NzPQNQG2lnVNjJNTdS0NjJN1k40MUoyANbyFkTlog7Ovn5lHqIlXhGkEE0MObC8M-JzQcvDhiMAclQzM7yXg8roAMYjlAl5bWayflAkUyrd3C7F1UYP2jg2BjXNDIzUXJ1vXAH8Xf2c1Z2fb0GA1vyCwHLA7Zm5q5AjsK7ECG9LmoPzgGuYE2pdSgFypuAkysAUAzcsrEWJgSs0TZuB0ht29JszA4Qud8gYyobmvWISB09hFwdfV1z8oUpRB2c01xNlDF2hmPNwL8aHByA4wFmNgAXbuUyUYFNKMDVJAJ9gbWaYZA_tWKYmppkapRslGycBaw9w0MUWSQQafSVL4paUZuEBc0Gy3oZEMA0tJUWmqLLASLUmSA_sdACaycW0
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSUpOSzQ0NzPQNQG2lnVNjJNTdS0NjJN1k40MUoyANbyFkTlog7Ovn5lHqIlXhGkEE0MObC8M-JzQcvDhiMAclQzM7yXg8roAMYjlAl5bWayflAkUyrd3C7F1UYP2jg2BjXNDIzUXJ1vXAH8Xf2c1Z2fb0GA1vyCwHLA7Zm5q5AjsK7ECG9nmoPzgGuYE2pdSgFypuAkysAUAzcsrEWJgSs0TZuB0ht29JszA4Qud8gYyobmvWISB09hFwdfV1z8oUpRB2c01xNlDF2hmPNwL8aHByA4wFmNgAXbuUyUYFNKMDVJAJ9gbWaYZA_tWKYmppkapRslGycBaw9w0MUWSQQafSVL4peUZOD1CfH3ifTz9vKUZuEBSoJlvQyMZBpaSotJUWWCFWpIkBw4HAKJ3dGA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=3D+MEMORY&rft.inventor=FAN+DARWIN+FRANSEDA&rft.inventor=HOPKINS+JOHN&rft.inventor=JAYANTI+SRIKANT&rft.inventor=SIMSEK-EGE+FATMA+ARZUM&rft.inventor=BRIGHTEN+JAMES&rft.inventor=MAURI+AURELIO+GIANCARLO&rft.date=2016-05-12&rft.externalDBID=A1&rft.externalDocID=US2016133752A1