REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between f...

Full description

Saved in:
Bibliographic Details
Main Authors PALACIOS TOMAS APOSTOL, LU BIN, MATIOLI ALISON DE NAZARETH
Format Patent
LanguageEnglish
Published 12.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.
Bibliography:Application Number: US201314651012