METHOD FOR FORMING THREE-DIMENSIONAL INTERCONNECTION, CIRCUIT ARRANGEMENT COMPRISING THREE-DIMENSIONAL INTERCONNECTION, AND METAL FILM-FORMING COMPOSITION FOR THREE-DIMENSIONAL INTERCONNECTION
In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coat...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
03.03.2016
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Subjects | |
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Abstract | In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process. |
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AbstractList | In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process. |
Author | SHIMODA SUGIROU KURIYAMA KEISUKE MATSUMOTO TAICHI OOKITA KENZOU KOBAYASHI ATSUSHI WATANABE KAZUTO ARITOME ISAO |
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Snippet | In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | METHOD FOR FORMING THREE-DIMENSIONAL INTERCONNECTION, CIRCUIT ARRANGEMENT COMPRISING THREE-DIMENSIONAL INTERCONNECTION, AND METAL FILM-FORMING COMPOSITION FOR THREE-DIMENSIONAL INTERCONNECTION |
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