PROGRAMMABLE RESISTANCE MEMORY ELEMENTS WITH ELECTRODE INTERFACE LAYER AND MEMORY DEVICES INCLUDING THE SAME

A memory element can include a first electrode comprising at least a first element; a second electrode formed of a conductive material; and a memory layer comprising a memory material programmable between different resistance states. The first element can be ion conductible within the memory materia...

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Bibliographic Details
Main Authors GOPALAN CHAKRAVARTHY, SHIELDS JEFFREY ALLAN, LEE WEI TI, MA YI
Format Patent
LanguageEnglish
Published 11.02.2016
Subjects
ELECTRICITY
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Summary:A memory element can include a first electrode comprising at least a first element; a second electrode formed of a conductive material; and a memory layer comprising a memory material programmable between different resistance states. The first element can be ion conductible within the memory material. A second electrode can include an interface layer in contact with the memory layer. The interface layer being formed by inclusion of at least one modifier element not present in a remainder of the second electrode and not ion conductible within the memory material.
Bibliography:Application Number: US201514791412