GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, LAMINATED GROUP III NITRIDE COMPOSITE SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: UEMATSU KOJI, SEKI YUKI, YAMAMOTO YOSHIYUKI, YANAGISAWA TAKUYA, ISHIBASHI KEIJI
• Format: Patent
• Language: English
• Published: 31.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride f...