GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, LAMINATED GROUP III NITRIDE COMPOSITE SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride f...

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Main Authors UEMATSU KOJI, SEKI YUKI, YAMAMOTO YOSHIYUKI, YANAGISAWA TAKUYA, ISHIBASHI KEIJI
Format Patent
LanguageEnglish
Published 31.12.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.
AbstractList A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.
Author UEMATSU KOJI
ISHIBASHI KEIJI
YAMAMOTO YOSHIYUKI
SEKI YUKI
YANAGISAWA TAKUYA
Author_xml – fullname: UEMATSU KOJI
– fullname: SEKI YUKI
– fullname: YAMAMOTO YOSHIYUKI
– fullname: YANAGISAWA TAKUYA
– fullname: ISHIBASHI KEIJI
BookMark eNqNjrsKwjAYhTPo4O0dfnCt0FoVHWOS2h9MUnJxLUXiJG2hPqfPZBA3l07nDB_fOXMyabs2zMj7YrSvABFBoTPIBTAtK23RCbD-bJ2hsVHFQQpXag6FNiCp8gVlzhtUF3BlRKkUCVypRBV5DqO0ydf7j1ohkWnFPXNxjIsbspEXlmT6aJ5DWP1yQdaFcKzchL6rw9A399CGV-3tNs32-THdnQ40y8dRH1mqVC0
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2015380496A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2015380496A13
IEDL.DBID EVB
IngestDate Fri Jul 19 15:54:23 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2015380496A13
Notes Application Number: US201314767706
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151231&DB=EPODOC&CC=US&NR=2015380496A1
ParticipantIDs epo_espacenet_US2015380496A1
PublicationCentury 2000
PublicationDate 20151231
PublicationDateYYYYMMDD 2015-12-31
PublicationDate_xml – month: 12
  year: 2015
  text: 20151231
  day: 31
PublicationDecade 2010
PublicationYear 2015
RelatedCompanies SUMITOMO ELECTRIC INDUSTRIES, LTD
RelatedCompanies_xml – name: SUMITOMO ELECTRIC INDUSTRIES, LTD
Score 3.0141702
Snippet A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, LAMINATED GROUP III NITRIDE COMPOSITE SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151231&DB=EPODOC&locale=&CC=US&NR=2015380496A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjR1dS8MwMIwp6ptOxY8pAWVPK7qt69aHIV3S0ohNx9qMvY12zUCQbriK_9Lf5CVuOhDG3pLccQk57nKXXO4Qup9J2W1bZmKkVkMaZiNrG0lzZhrStpOkmUiVYl1FW3DLF-bzuD0uobf1XxidJ_RTJ0cEiZqCvBdaXy_-LrGojq1cPqSvMDR_8uIera28Y3V8gVKh_Z47CGlIaoT0RFTjQw1rdcEcthzwlfbAkO4oeXBHffUvZbF5qHjHaH8A9PLiBJVkXkGHZF17rYIOgtWTNzRX0rc8RV86Rh4zxjBn8ZBRF5MwGIQRqB8cib6qfwwth1McuLEfUgwuHg4cLjyHxELFPeDYB1QncOv4xQkYB3yKdyJb13T_o0aKkSGngsQwGXVHjOy4hDN057kx8Q3YmMkvHyYi2tzF1jkq5_NcXiDctDPbTEGtpq3E7MwyO8vsR_AcU2mqKuONS1TdRulqO_gaHanuT3bFKioX7x_yBiyBIr3VDPwGIIaoMg
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjR1dS8MwMAwV55tOxY-pAWVPK7qt--jDkC5paXRNx5qOvY3WZiBIN1zFf-lv8hI3HQhjbyF3XMIdd7lLLncI3U2l7DRbZmwkrZo0zFraNOL61DSkZcVxPZaqxLrKtuAtLzKfxs1xAb2t_sLoOqGfujgiaNQL6Huu7fX87xKL6tzKxX3yClOzR1d0aWUZHavjC4wK7XWdQUADUiGkG4UVPtSwRgfc4ZYNsdIuONltpQ_OqKf-pczXDxX3EO0NgF6WH6GCzEqoSFa910po318-ecNwqX2LY_Slc-QxYwxzJoaMOpgE_iAIwfzgMOqp_scwsjnFviO8gGII8bBv88i1iYhU3gMWHqDavlPFfdtnHPAp3opsVdP9jxoqQQacRkTAYtQZMbLlFk7QresI4hnAmMmvHCZRuM7FxinayWaZPEO4bqWWmYBZTRqx2Z6mVppaDxA5JtJUXcZr56i8idLFZvANKnrC70_6jD9fogMF-qm0WEY7-fuHvAKvIE-utTC_ATS5qyU
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=GROUP+III+NITRIDE+COMPOSITE+SUBSTRATE+AND+METHOD+FOR+MANUFACTURING+THE+SAME%2C+LAMINATED+GROUP+III+NITRIDE+COMPOSITE+SUBSTRATE%2C+AND+GROUP+III+NITRIDE+SEMICONDUCTOR+DEVICE+AND+METHOD+FOR+MANUFACTURING+THE+SAME&rft.inventor=UEMATSU+KOJI&rft.inventor=SEKI+YUKI&rft.inventor=YAMAMOTO+YOSHIYUKI&rft.inventor=YANAGISAWA+TAKUYA&rft.inventor=ISHIBASHI+KEIJI&rft.date=2015-12-31&rft.externalDBID=A1&rft.externalDocID=US2015380496A1