METHOD FOR REPAIRING DAMAGES TO SIDEWALLS OF AN ULTRA-LOW DIELECTRIC CONSTANT FILM
A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps: depositing an ultra-low dielectric constant film on an semiconductor substrate; dry-etching the ultra-low dielectric constant film to form a sidew...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
26.11.2015
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps: depositing an ultra-low dielectric constant film on an semiconductor substrate; dry-etching the ultra-low dielectric constant film to form a sidewall structure thereof; performing wet cleaning by using a chemical agent containing an unsaturated hydrocarbon having -O-C(Re)x; and performing ultraviolet curing. The present invention can restore pores size and porosity of the ultra-low dielectric constant film, and to keep effective dielectric constant to a minimum. |
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| AbstractList | A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps: depositing an ultra-low dielectric constant film on an semiconductor substrate; dry-etching the ultra-low dielectric constant film to form a sidewall structure thereof; performing wet cleaning by using a chemical agent containing an unsaturated hydrocarbon having -O-C(Re)x; and performing ultraviolet curing. The present invention can restore pores size and porosity of the ultra-low dielectric constant film, and to keep effective dielectric constant to a minimum. |
| Author | ZUO QINGYUN ZENG SHAOHAI LI MING |
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| RelatedCompanies | SHANGHAI INTEGRATED CIRCUIT RESEARCH AND DEVELOPMENT CENTER CO., LTD |
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| Snippet | A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps:... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHOD FOR REPAIRING DAMAGES TO SIDEWALLS OF AN ULTRA-LOW DIELECTRIC CONSTANT FILM |
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