SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

A semiconductor device having a semiconductor substrate is provided. The semiconductor substrate includes an integrated circuit, which includes multi-layer structured metallization and inter-metal dielectric. The integrated circuit is below a passivation, which is over a metal structure. The metal s...

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Main Authors LIANG SHIH-WEI, WU KAIIANG, WANG YEN-PING, MIAO CHIAUN
Format Patent
LanguageEnglish
Published 11.06.2015
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Abstract A semiconductor device having a semiconductor substrate is provided. The semiconductor substrate includes an integrated circuit, which includes multi-layer structured metallization and inter-metal dielectric. The integrated circuit is below a passivation, which is over a metal structure. The metal structure includes a metal pad and an under bumper metallurgy, which is over and aligned with the metal pad. The metal pad is electrically connected to the integrated circuit, and the under bumper metallurgy is configured to electrically connect to a conductive component of another semiconductor device. The integrated circuit further includes a conductive trace, which is below and aligned with the metal structure. The conductive trace is connected to a power source such that an electromagnetic field is generated at the conductive trace when an electric current from the power source passes through the conductive trace.
AbstractList A semiconductor device having a semiconductor substrate is provided. The semiconductor substrate includes an integrated circuit, which includes multi-layer structured metallization and inter-metal dielectric. The integrated circuit is below a passivation, which is over a metal structure. The metal structure includes a metal pad and an under bumper metallurgy, which is over and aligned with the metal pad. The metal pad is electrically connected to the integrated circuit, and the under bumper metallurgy is configured to electrically connect to a conductive component of another semiconductor device. The integrated circuit further includes a conductive trace, which is below and aligned with the metal structure. The conductive trace is connected to a power source such that an electromagnetic field is generated at the conductive trace when an electric current from the power source passes through the conductive trace.
Author MIAO CHIAUN
WANG YEN-PING
WU KAIIANG
LIANG SHIH-WEI
Author_xml – fullname: LIANG SHIH-WEI
– fullname: WU KAIIANG
– fullname: WANG YEN-PING
– fullname: MIAO CHIAUN
BookMark eNrjYmDJy89L5WQwDnb19XT293MJdQ7xD1JwcQ3zdHZVcPRzUfB1DfHwd1Hwd1Nw8w_y9fRzVwjxcFUIdvR15WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGpoZmRkYWFo6GxsSpAgAkaCmD
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2015162288A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2015162288A13
IEDL.DBID EVB
IngestDate Fri Jul 19 16:49:01 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2015162288A13
Notes Application Number: US201414209535
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150611&DB=EPODOC&CC=US&NR=2015162288A1
ParticipantIDs epo_espacenet_US2015162288A1
PublicationCentury 2000
PublicationDate 20150611
PublicationDateYYYYMMDD 2015-06-11
PublicationDate_xml – month: 06
  year: 2015
  text: 20150611
  day: 11
PublicationDecade 2010
PublicationYear 2015
RelatedCompanies TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
RelatedCompanies_xml – name: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
Score 2.989758
Snippet A semiconductor device having a semiconductor substrate is provided. The semiconductor substrate includes an integrated circuit, which includes multi-layer...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150611&DB=EPODOC&locale=&CC=US&NR=2015162288A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-LHlIDSt6L9WNc9DNmS1E5oO9Z27G30I4WBdMNV_Pe9hk73tLckB5fk4Je7S-4uAM9oM-gZ6mU1F4Ysqp2qdiIs1SxerdwStlkkMtrCt9zY_Fj0Fi343OXCyDqhP7I4IiIqQ7xX8rze_F9iMRlbuX1JVzi0fnOiIVMa77gul4fYZeMhnwYsoAqlwzhU_JmkaZau2_YIfaUjNKT7NR74fFznpWz2lYpzDsdT5FdWF9ASZQdO6e7vtQ6ceM2TNzYb9G0vwQhroQU-i2kUzAjj8wnlZOQz4vHIDRgJHIJOnTfx30nkchKOPH4FTw6PqKvi7Mu_zS7jcH-pxjW0y3UpboAYeZamiTno61lhDnJh21ov0TVDE2ZaCKu4he4hTneHyfdwVnfrIChN60K7-voWD6huq_RRSukXv1V94A
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsWPqQFlb0X7sa57GLIlqZ2u7VjbsbfRjxQE6Yar-O97DZvuaW8hB5fk4JfLJXe_ADzimUFL0S8rmdAlqXaiWLEwFSN_NjNTWEYey2wLz3Qi423emdfgc1sLI3lCfyQ5IiIqRbyXcr9e_V9iMZlbuX5KPrBr-WKHfdbeRMcVXR5ilw37fOIzn7Yp7UdB25tKmWpqmmUNMFY6wEN2t8IDnw2rupTVrlOxT-BwgvqK8hRqomhCg27_XmvCkbt58sbmBn3rM9CDymi-xyIa-lPC-GxEORl4jLg8dHxGfJtgUOeOvFcSOpwEA5efw4PNQ-ooOPrib7GLKNidqn4B9WJZiEsgepYmSWz0ulqaG71MWJbaiTVVV4WR5MLMr6C1T9P1fvE9NJzQHS_GI-_9Bo4rUZUQpaotqJdf3-IWXW-Z3EmL_QLSE4DT
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE+AND+METHOD+OF+FORMING+THE+SAME&rft.inventor=LIANG+SHIH-WEI&rft.inventor=WU+KAIIANG&rft.inventor=WANG+YEN-PING&rft.inventor=MIAO+CHIAUN&rft.date=2015-06-11&rft.externalDBID=A1&rft.externalDocID=US2015162288A1