MEMORY STRING AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

A memory string includes a pass transistor, first memory cells connected in series to a drain terminal of the pass transistor, and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in seri...

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Bibliographic Details
Main Authors JUNG SUNG WOOK, PARK YU JIN, YOO HYUN SEUNG, LEE DONG KEE
Format Patent
LanguageEnglish
Published 07.05.2015
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Summary:A memory string includes a pass transistor, first memory cells connected in series to a drain terminal of the pass transistor, and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series. Here, 'k' denotes an integer that is equal to or greater than '2'.
Bibliography:Application Number: US201414220976