THROUGH-SUBSTRATE VIA SHIELDING

A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located betwe...

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Main Authors KOTHANDARAMAN CHANDRASEKHARAN, SAFRAN JOHN M, LIN CHUNG-HSUN, KIM DAEIK
Format Patent
LanguageEnglish
Published 05.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.
AbstractList A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.
Author KOTHANDARAMAN CHANDRASEKHARAN
KIM DAEIK
LIN CHUNG-HSUN
SAFRAN JOHN M
Author_xml – fullname: KOTHANDARAMAN CHANDRASEKHARAN
– fullname: SAFRAN JOHN M
– fullname: LIN CHUNG-HSUN
– fullname: KIM DAEIK
BookMark eNrjYmDJy89L5WSQD_EI8g9199ANDnUKDglyDHFVCPN0VAj28HT1cfH0c-dhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhqYGxqamFpaOhsbEqQIAUekkhg
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2015035589A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2015035589A13
IEDL.DBID EVB
IngestDate Fri Jul 19 15:30:36 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2015035589A13
Notes Application Number: US201414519731
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150205&DB=EPODOC&CC=US&NR=2015035589A1
ParticipantIDs epo_espacenet_US2015035589A1
PublicationCentury 2000
PublicationDate 20150205
PublicationDateYYYYMMDD 2015-02-05
PublicationDate_xml – month: 02
  year: 2015
  text: 20150205
  day: 05
PublicationDecade 2010
PublicationYear 2015
RelatedCompanies INTERNATIONAL BUSINESS MACHINES CORPORATION
RelatedCompanies_xml – name: INTERNATIONAL BUSINESS MACHINES CORPORATION
Score 2.9692903
Snippet A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title THROUGH-SUBSTRATE VIA SHIELDING
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150205&DB=EPODOC&locale=&CC=US&NR=2015035589A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUqxMElKM0vTTUo0NdE1STJPBGYpg2TdNBNTo0SDJIPkFPAOOV8_M49QE68I0wgmhhzYXhjwOaHl4MMRgTkqGZjfS8DldQFiEMsFvLayWD8pEyiUb-8WYuuiBu0dA1s3Rgamai5Otq4B_i7-zmrOzrahwWp-QRA50FHilo7AvhIrsCFtDsoPrmFOoH0pBciVipsgA1sA0Ly8EiEGptQ8YQZOZ9jda8IMHL7QKW8gE5r7ikUY5EM8gvxD3T10g0OdQHcdh7gqhHk6KgR7eLr6uHj6uYsyKLu5hjh76AJtiod7LD40GNlZxmIMLMAuf6oEg4JhsqVJiolpiqWZRSqQYWlhkGickmRmYmlglAyszw0lGWTwmSSFX1qagQvEBa89NpVhYCkpKk2VBVatJUly4BABAMqUeEs
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8QNOKbokYUhUSzt8Uy2sEeiIFt0CnbCNsIb2TdRmJikMiM_763CsoTb5decv1Ifr279j4AHrW0S8VSX6oiZlSlohMjpEiiLinTYiJIksoMOdfTeURf5mxegvddLoysE_otiyMiohLEey7v6_X_I5YlYys3T-INhz6eh2HPUrbeMVo3GmGKNejZE9_yTcU0e1GgeNNfXlFK3Oijr3SERnanwIM9GxR5Ket9pTI8g-MJylvl51DKVlWomLvea1U4cbdf3khu0be5gEbIp3404moQDYpex6HdnDn9ZsAde2w53ugSHoZ2aHIVZ1r8bWwRBfvLal9BGV3-7BqarcSgKWWpoXczJIwuidup0KlBtAT1easG9UOSbg6zG1DhoTtejB3v9RZOC5aMQ2Z1KOefX9kdqtlc3MvT-QGZrns-
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=THROUGH-SUBSTRATE+VIA+SHIELDING&rft.inventor=KOTHANDARAMAN+CHANDRASEKHARAN&rft.inventor=SAFRAN+JOHN+M&rft.inventor=LIN+CHUNG-HSUN&rft.inventor=KIM+DAEIK&rft.date=2015-02-05&rft.externalDBID=A1&rft.externalDocID=US2015035589A1