APPARATUS AND METHODS RELATING TO A MEMORY CELL HAVING A FLOATING BODY

• Main Authors: NGUYEN MIKE N, TANG SANH D
• Format: Patent
• Language: English
• Published: 18.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An apparatus is disclosed for a memory cell having a floating body. A memory cell may include a transistor over an insulation layer, the transistor including a source, and a drain. The memory cell may also include a floating body including a first region positioned between the source and the drain, a second region positioned remote from each of the source and drain, and a passage extending through the insulation layer and coupling the first region to the second region. Additionally, the memory cell may include a bias gate at least partially surrounding the second region and configured for operably coupling to a bias voltage. Furthermore, the memory cell may include a plurality of dielectric layers, wherein each outer vertical surface of the second region has a dielectric layer of the plurality adjacent thereto.