Vanadium Doped SiC Single Crystals and Method Thereof

A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.

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Main Authors ZWIEBACK ILYA, RULAND GARY E, BROUHARD BRYAN K, NOLAN MICHAEL C, GUPTA AVINASH K, ANDERSON THOMAS E
Format Patent
LanguageEnglish
Published 21.08.2014
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Abstract A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.
AbstractList A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.
Author NOLAN MICHAEL C
BROUHARD BRYAN K
ANDERSON THOMAS E
RULAND GARY E
GUPTA AVINASH K
ZWIEBACK ILYA
Author_xml – fullname: ZWIEBACK ILYA
– fullname: RULAND GARY E
– fullname: BROUHARD BRYAN K
– fullname: NOLAN MICHAEL C
– fullname: GUPTA AVINASH K
– fullname: ANDERSON THOMAS E
BookMark eNrjYmDJy89L5WQwDUvMS0zJLM1VcMkvSE1RCM50BuK89JxUBeeiyuKSxJxihcS8FAXf1JKM_BSFkIzUotT8NB4G1jSgTCovlOZmUHZzDXH20E0tyI9PLS5ITE7NSy2JDw02MjA0MTI2MbQ0cTQ0Jk4VAK2VLuI
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2014234194A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2014234194A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:05:55 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2014234194A13
Notes Application Number: US201314064604
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140821&DB=EPODOC&CC=US&NR=2014234194A1
ParticipantIDs epo_espacenet_US2014234194A1
PublicationCentury 2000
PublicationDate 20140821
PublicationDateYYYYMMDD 2014-08-21
PublicationDate_xml – month: 08
  year: 2014
  text: 20140821
  day: 21
PublicationDecade 2010
PublicationYear 2014
RelatedCompanies II-VI INCORPORATED
RelatedCompanies_xml – name: II-VI INCORPORATED
Score 2.9445446
Snippet A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium...
SourceID epo
SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title Vanadium Doped SiC Single Crystals and Method Thereof
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140821&DB=EPODOC&locale=&CC=US&NR=2014234194A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3bSsMw9DCmqG86FS9TAkrfimuXtvNhiEtbhtBtuAt7G02XjsFMx9oh_r0nodM97SGQC5xcyMm55FwAnmPFV8SpbbpN2jApd7jZSgQ3KUpxLkWGw2sqb-So53bH9GPqTCuw2vnC6Dih3zo4ImJUgvhe6Pd6_a_E8rVtZf7Cl9iVvYWjtm-U0rGl0idbht9pB4O-32cGY-3x0Oh96jFbxS6j7ygrHSEj7SkDsGDSUX4p632iEp7D8QDhyeICKkLW4JTtcq_V4CQqv7yxWmJffgnORFtobb-In63FnAyXDItcrARhmx9k81Y5ieWcRDorNMEbsBFZegVPYTBiXRPnn_1tdzYe7i-2eQ1VmUlxA4Rjj2eljmi0XmkiUFRK7FZszT07FbGX0luoH4J0d3j4Hs5UU-lLbasO1WKzFQ9IcAv-qM_pFyO5gqU
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LSsNAcChVrDetitWqC0puwSbZPDwEsZuWqk1b7IPeSh4bKdSkNCni3zu7tNpTDwvLDsw-2Nl57DwAHgIhVwSJrloGbag0NEPViXioUtTiLIoCh22IaGS_Z3XG9G1qTkuw2MbCyDyh3zI5IlJUhPReyPd6-W_E8qRvZf4YznEoe26PXE_ZaMeaKJ-sKV7TbQ36Xp8pjLnjodL7kDBd5C6jL6grHaCQ7YhM-61JU8SlLHeZSvsEDgeILy1OocTTKlTYtvZaFY78zZc3djfUl5-BOZEeWusv4mVLHpPhnGFLPxecsNUPinmLnARpTHxZFZrgDVjxLDmH-3ZrxDoqzj_72-5sPNxdrHEB5TRL-SWQEEdsLTF5w3miEUdVKdKdQIttPeGBndAa1PdhutoPvoNKZ-R3Z93X3vs1HAuQsJ3qWh3KxWrNb5D5FuGtPLNfa_2FlQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Vanadium+Doped+SiC+Single+Crystals+and+Method+Thereof&rft.inventor=ZWIEBACK+ILYA&rft.inventor=RULAND+GARY+E&rft.inventor=BROUHARD+BRYAN+K&rft.inventor=NOLAN+MICHAEL+C&rft.inventor=GUPTA+AVINASH+K&rft.inventor=ANDERSON+THOMAS+E&rft.date=2014-08-21&rft.externalDBID=A1&rft.externalDocID=US2014234194A1