METHOD OF FORMING A THROUGH-SILICON VIA UTILIZING A METAL CONTACT PAD IN A BACK-END-OF-LINE WIRING LEVEL TO FILL THE THROUGH-SILICON VIA
A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
14.08.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with plated-conductive material (e.g., copper) from an electroplating solution. Moreover, the method provides a way to fill high aspect ratio TSVs with minimal additional semiconductor fabrication process steps, which can increase the silicon area that is available for forming additional electronic components on integrated circuits. |
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| AbstractList | A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with plated-conductive material (e.g., copper) from an electroplating solution. Moreover, the method provides a way to fill high aspect ratio TSVs with minimal additional semiconductor fabrication process steps, which can increase the silicon area that is available for forming additional electronic components on integrated circuits. |
| Author | GRAVES-ABE TROY L FAROOQ MUKTA G |
| Author_xml | – fullname: GRAVES-ABE TROY L – fullname: FAROOQ MUKTA G |
| BookMark | eNqNjb8KwjAYxDPo4L93-MA50FahrjFNmg9jIm1awaUUiZO0hfoQPrYRHR2cjrvfHTcnk67v_Iw8j8Ipm4GVIG1xRJMDA6cKW-WKlqiRWwM1MqhcMJcPDxumIRDHuIMTywBNiPeMH6gwGbWSajQCzli8B1rUQoOzIFEHVeLXwZJMb-199KuvLshaCscV9UPf-HFor77zj6YqkyjeJkm6SyMWb_5rvQBO30AV |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US2014227870A1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US2014227870A13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 14:37:56 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US2014227870A13 |
| Notes | Application Number: US201414255067 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140814&DB=EPODOC&CC=US&NR=2014227870A1 |
| ParticipantIDs | epo_espacenet_US2014227870A1 |
| PublicationCentury | 2000 |
| PublicationDate | 20140814 |
| PublicationDateYYYYMMDD | 2014-08-14 |
| PublicationDate_xml | – month: 08 year: 2014 text: 20140814 day: 14 |
| PublicationDecade | 2010 |
| PublicationYear | 2014 |
| RelatedCompanies | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| RelatedCompanies_xml | – name: INTERNATIONAL BUSINESS MACHINES CORPORATION |
| Score | 2.9468484 |
| Snippet | A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHOD OF FORMING A THROUGH-SILICON VIA UTILIZING A METAL CONTACT PAD IN A BACK-END-OF-LINE WIRING LEVEL TO FILL THE THROUGH-SILICON VIA |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140814&DB=EPODOC&locale=&CC=US&NR=2014227870A1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwEA9jivqmU_FjSkDpW3C12dY9DOnSdq32Y2zpHL6Mdk1BkG64iv-Cf7aXuukeZG9JfuRCApfcL7m7IHSrNVvxLIs1AtYBJVRNKOnoapNksZrq9wLQMuONH7SciD5OmpMKelvHwpR5Qj_L5IigUTPQ96Lcrxd_l1hm6Vu5vEteoWn-YPOuqazYMbAFXaWK2etag9AMmcJYNxopwbDEZNRnu2EAV9oBQ7ot9cEa92RcymLzULEP0e4A5OXFEaqIvIb22frvtRra81dP3lBcad_yGH35FndCE4c2Bu7mu0EfG5g7wzDqO2Tkei4LAzx2DRxxqLz84NDH8DAg3GAcDwwTuwE09wz2RKzAJKFNPDew8LMr_SKwJz_lxDzENtB8EG79N8AJurEtzhwCU5r-ruA0Gm3OXztF1XyeizOEhUzpJsAIylpt2kkbcUdLqSo6SSOLRarp56i-TdLFdvgSHciqvIJVaR1Vi_cPcQVneJFcl0v_DY26k6c |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT4MwEG4WNc43nRp_TG2i4a1xSLfBw2JYgYEDumxlLr4sMCAxMWxxGP8F_2wP3HQPZm-0X3rk2lx7X9u7InSnNFvhLA0VAt4BJVSOKNFUuUnSUI7VhwTQMuON57fsgD5NmpMKelvHwpR5Qj_L5IhgUTOw97ycrxd_m1hGebdyeR-9QtX80RIdQ1qxY2ALqkwlo9sxB9zgTGKsE4wkf1hiRdRnu6EDV9oFJ7td2IM57hZxKYvNRcU6RHsDkJflR6iSZDVUZeu312po31sdecPnyvqWx-jLM4XNDcwtDNzNc_we1rGwhzzo2WTkuA7jPh47Og4EFF5-cGijuxgQoTOBB7qBHR-quzrrE9M3CLeI6_gmfnaKexHYLR7lxIJjC2g-CDf_-8EJurVMwWwCKk1_e3AajDb1V07RTjbPkjOEkyKlWwJOUNpqUy1uhJoSUznRokYaJrGinqP6NkkX2-EbVLWF505Bjf4lOiigYjtWpnW0k79_JFewnufRdTkM36iolpo |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=METHOD+OF+FORMING+A+THROUGH-SILICON+VIA+UTILIZING+A+METAL+CONTACT+PAD+IN+A+BACK-END-OF-LINE+WIRING+LEVEL+TO+FILL+THE+THROUGH-SILICON+VIA&rft.inventor=GRAVES-ABE+TROY+L&rft.inventor=FAROOQ+MUKTA+G&rft.date=2014-08-14&rft.externalDBID=A1&rft.externalDocID=US2014227870A1 |