SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect tr...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
13.03.2014
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Subjects | |
Online Access | Get full text |
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Summary: | An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance. |
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Bibliography: | Application Number: US201314082618 |