Semiconductor Devices and Methods of Manufacturing the Same

• Main Authors: MIN JI-YOUNG, BAEK SUNG-KWEON, NAM GAB-JIN, CHUNG EUN-AE, CHOI JUNG-DAL, KIM JIN-SOAK
• Format: Patent
• Language: English
• Published: 06.02.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods of manufacturing a semiconductor device include forming a thin layer on a substrate including a first region and a second region and forming a gate insulating layer on the thin layer. A lower electrode layer is formed on the gate insulating layer and the lower electrode layer disposed in the second region is removed to expose the gate insulating layer in the second region. Nitrogen is doped into an exposed portion of the gate insulating layer and the thin layer disposed under the gate insulating layer. An upper electrode layer is formed on the lower electrode layer remaining in the first region and the exposed portion of the gate insulating layer. The upper electrode layer, the lower electrode layer, the gate insulating layer and the thin layer are partially removed to form first and second gate structures in the first and second regions. The process may be simplified.