SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type source region (NNS), and a P+ type impurity region (BCR) a...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
16.01.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type source region (NNS), and a P+ type impurity region (BCR) are formed in the P type well (PW). The N type source region (NS) is formed on a region situated directly below the N+ type source region (NNS), and not on a region situated directly below the type impurity region (BCR), and the P+ type impurity region (BCR) is in direct contact with the P type well (PW). |
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| AbstractList | An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type source region (NNS), and a P+ type impurity region (BCR) are formed in the P type well (PW). The N type source region (NS) is formed on a region situated directly below the N+ type source region (NNS), and not on a region situated directly below the type impurity region (BCR), and the P+ type impurity region (BCR) is in direct contact with the P type well (PW). |
| Author | KUBO SHUNJI |
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| RelatedCompanies | KUBO SHUNJI RENESAS ELECTRONICS CORPORATION |
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| Snippet | An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
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