METAL INTERCONNECT OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: KIM YONG TAE, KIM YOUNG HWAN, KIM SEONG IL, KIM CHUN KEUN
• Format: Patent
• Language: English
• Published: 22.08.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a method of manufacturing a metal interconnect of a semiconductor device including: forming a interconnect hole by patterning an interlayer insulating film formed on a substrate; performing a nitriding treatment on a surface of the interlayer insulating film by injecting a gas including nitrogen into a deposition apparatus in which the substrate is disposed; forming a diffusion preventing film by injecting the gas including nitrogen and a metal source gas into the deposition apparatus together; filling the interconnect hole with a metal; and removing the metal formed on a part other than the interconnect hole by a chemical mechanical polishing (CMP) process. Accordingly, the mechanical strength of the interlayer insulating film is increased, thereby preventing scratches or defects that are generated during the chemical mechanical polishing process.