EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER

• Main Authors: ROBISON ROBERT R, CHATTY KIRAN V, CUMMINGS JASON E, FURUKAWA TOSHIHARU, GAUTHIER ROBERT J, TONTI WILLIAM R, RANKIN JED H
• Format: Patent
• Language: English
• Published: 08.08.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three differ...