EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER

Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three differ...

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Main Authors ROBISON ROBERT R, CHATTY KIRAN V, CUMMINGS JASON E, FURUKAWA TOSHIHARU, GAUTHIER ROBERT J, TONTI WILLIAM R, RANKIN JED H
Format Patent
LanguageEnglish
Published 08.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three different thicknesses; at least one recess located within the distinct SOI regions; and an oxide cap over the at least one recess.
AbstractList Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three different thicknesses; at least one recess located within the distinct SOI regions; and an oxide cap over the at least one recess.
Author FURUKAWA TOSHIHARU
ROBISON ROBERT R
GAUTHIER ROBERT J
CUMMINGS JASON E
RANKIN JED H
TONTI WILLIAM R
CHATTY KIRAN V
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– fullname: GAUTHIER ROBERT J
– fullname: TONTI WILLIAM R
– fullname: RANKIN JED H
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Snippet Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER
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