EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER

Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three differ...

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Bibliographic Details
Main Authors ROBISON ROBERT R, CHATTY KIRAN V, CUMMINGS JASON E, FURUKAWA TOSHIHARU, GAUTHIER ROBERT J, TONTI WILLIAM R, RANKIN JED H
Format Patent
LanguageEnglish
Published 08.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three different thicknesses; at least one recess located within the distinct SOI regions; and an oxide cap over the at least one recess.
Bibliography:Application Number: US201313835463