NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

A non-volatile memory device and a method of manufacturing the same are provided. A first portion stack having a first circuit element including at least one layer selected from at least one diode layer, at least one variable resistive layer, and interconnection layer is formed on a first substrate....

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Bibliographic Details
Main Authors HWANG EUNG RIM, YOON HYO SEOB
Format Patent
LanguageEnglish
Published 30.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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