NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

A non-volatile memory device and a method of manufacturing the same are provided. A first portion stack having a first circuit element including at least one layer selected from at least one diode layer, at least one variable resistive layer, and interconnection layer is formed on a first substrate....

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Bibliographic Details
Main Authors HWANG EUNG RIM, YOON HYO SEOB
Format Patent
LanguageEnglish
Published 30.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A non-volatile memory device and a method of manufacturing the same are provided. A first portion stack having a first circuit element including at least one layer selected from at least one diode layer, at least one variable resistive layer, and interconnection layer is formed on a first substrate. A second portion stack having a second circuit element including at least the other layer selected from the at least one diode layer, the at least variable resistive layer, and the at least interconnection layer is formed on a second substrate. The first circuit element and the second circuit element are bonded together and the second substrate is removed.
Bibliography:Application Number: US201213689366