METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: for...

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Bibliographic Details
Main Authors HIRAYAMA YUSUKE, ONO KATSUYUKI, HATOH HIDEYUKI
Format Patent
LanguageEnglish
Published 28.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; isotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.
Bibliography:Application Number: US201113582536