SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed. Over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is...

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Main Authors FUKUI SHOICHI, OKADA MASAKAZU, FURUSAWA TAKESHI, SUZUMURA NAOHITO, KAMOSHIMA TAKAO, AMISHIRO MASATSUGU
Format Patent
LanguageEnglish
Published 15.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed. Over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11, insulating films 14, 15, 16 are formed. An opening is formed in those insulating films and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 to form the opening. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance. By interposing the insulating film 14 therebetween with a higher density of Si (silicon) atoms than the insulating film 11, an electrically weak interface is prevented from being formed.
AbstractList The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed. Over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11, insulating films 14, 15, 16 are formed. An opening is formed in those insulating films and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 to form the opening. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance. By interposing the insulating film 14 therebetween with a higher density of Si (silicon) atoms than the insulating film 11, an electrically weak interface is prevented from being formed.
Author KAMOSHIMA TAKAO
FURUSAWA TAKESHI
SUZUMURA NAOHITO
AMISHIRO MASATSUGU
OKADA MASAKAZU
FUKUI SHOICHI
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SUZUMURA NAOHITO
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OKADA MASAKAZU
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Snippet The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs...
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
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