MOL INSITU PT REWORK SEQUENCE
The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the...
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Format | Patent |
Language | English |
Published |
04.10.2012
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Abstract | The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia. |
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AbstractList | The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia. |
Author | BAARS PETER LEPPER MARCO KAHLER UWE SCHROEDER VIVIEN |
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Notes | Application Number: US201113079492 |
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RelatedCompanies | BAARS PETER GLOBALFOUNDRIES INC LEPPER MARCO KAHLER UWE SCHROEDER VIVIEN |
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Snippet | The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | MOL INSITU PT REWORK SEQUENCE |
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