Semiconductor Device Comprising a Capacitor Formed in the Metallization System Based on Dummy Metal Features

• Main Authors: BAARS PETER, SCHROEDER VIVIEN, SCHLOESSER TILL
• Format: Patent
• Language: English
• Published: 06.09.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular" metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placehold...