Semiconductor Device Comprising a Capacitor Formed in the Metallization System Based on Dummy Metal Features

When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular" metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placehold...

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Bibliographic Details
Main Authors BAARS PETER, SCHROEDER VIVIEN, SCHLOESSER TILL
Format Patent
LanguageEnglish
Published 06.09.2012
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