Electrical Antifuse, Method of Manufacture and Method of Programming

An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy havin...

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Bibliographic Details
Main Authors CESTERO ALBERTO, SAFRAN JOHN M, PARK BYEONGJU
Format Patent
LanguageEnglish
Published 24.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.
Bibliography:Application Number: US201213362043