Abstract A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation shield disposed above the crucible; a cylindrical purging tube that is provided inside the thermal radiation shield so as to straighten the inert gas; a CCD camera that photographs the mirror image of the thermal radiation shield reflected on the liquid surface of the silicon melt through the purging tube; a liquid surface level calculator that calculates the liquid surface level of the silicon melt from the position of the mirror image photographed by the camera; and a conversion table creator that creates a conversion table representing a relationship between the liquid surface level of the silicon melt and the mirror image position obtained. The liquid surface level calculator calculates the liquid surface level based on the conversion table.
AbstractList A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation shield disposed above the crucible; a cylindrical purging tube that is provided inside the thermal radiation shield so as to straighten the inert gas; a CCD camera that photographs the mirror image of the thermal radiation shield reflected on the liquid surface of the silicon melt through the purging tube; a liquid surface level calculator that calculates the liquid surface level of the silicon melt from the position of the mirror image photographed by the camera; and a conversion table creator that creates a conversion table representing a relationship between the liquid surface level of the silicon melt and the mirror image position obtained. The liquid surface level calculator calculates the liquid surface level based on the conversion table.
Author NARUSHIMA YASUHITO
HAYASHI KENGO
TAKANASHI KEIICHI
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Snippet A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the...
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SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL
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