ION IMPLANTATION THROUGH LASER FIELDS
Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
25.08.2011
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped. |
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| AbstractList | Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped. |
| Author | RAMAPPA DEEPAK A |
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| Notes | Application Number: US20100712816 |
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| RelatedCompanies | VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC |
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| Snippet | Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
| Title | ION IMPLANTATION THROUGH LASER FIELDS |
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