SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

In a semiconductor device having an LDMOSFET, a source electrode is at the back surface thereof. Therefore, to reduce electric resistance between a source contact region in the top surface and the source electrode at the back surface, a poly-silicon buried plug is provided which extends from the upp...

Full description

Saved in:
Bibliographic Details
Main Authors UMEMURA NOBUAKI, ARIE HIROYUKI, HATTORI NOBUYOSHI, HARA KIMIO, ISHIKAWA MAKOTO, NITTA KYOYA, NAKANISHI NOBUTO
Format Patent
LanguageEnglish
Published 30.12.2010
Subjects
Online AccessGet full text

Cover

Loading…