SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In a semiconductor device having an LDMOSFET, a source electrode is at the back surface thereof. Therefore, to reduce electric resistance between a source contact region in the top surface and the source electrode at the back surface, a poly-silicon buried plug is provided which extends from the upp...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
30.12.2010
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Subjects | |
Online Access | Get full text |
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