Doped Gallium Nitride Annealing

The present invention involves annealing methods for doped gallium nitride (GaN). In one embodiment, one method includes placing, within a heating unit, a silicon carbide (SiC) wafer as a susceptor in close proximity with a doped GaN epilayer, wherein the doped GaN epilayer is either a GaN layer gro...

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Bibliographic Details
Main Authors SUNDARESAN SIDDARTH G, TIAN YONGLAI, MULPURI RAO V
Format Patent
LanguageEnglish
Published 17.06.2010
Subjects
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