Methods of Forming Semiconductor Devices

• Main Authors: HYUN SANGJIN, LEE HYOSAN, CHOI SIYOUNG, HONG HYUNG-SEOK, CHO HAGJU, NA HOONJOO, LEE HYE-LAN, PARK JUN-WOONG, SEO KANG-III, SHIN YUGYUN
• Format: Patent
• Language: English
• Published: 22.04.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide...