SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS

A technique capable of preventing whiskers which are generated in a plating film formed on the surface of each of leads of a semiconductor device is provided. Particularly, a technique capable of preventing generation of whiskers in a plating film containing tin as a primary material and not contain...

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Bibliographic Details
Main Authors OKURA YASUTAKA, IWASAKI TOMIO, TERASAKI TAKESHI
Format Patent
LanguageEnglish
Published 30.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A technique capable of preventing whiskers which are generated in a plating film formed on the surface of each of leads of a semiconductor device is provided. Particularly, a technique capable of preventing generation of whiskers in a plating film containing tin as a primary material and not containing lead is provided. The plating film formed on the surface of the lead is formed so that a particular plane orientation among plane orientations of tin constituting the plating film is parallel to the surface of the lead. Specifically, the plating film is formed so that the (001) plane of tin is parallel to the surface of the lead. Thus, the coefficient of thermal expansion of tin constituting the plating film can be made to be lower than a coefficient of thermal expansion of the copper constituting the lead.
Bibliography:Application Number: US20080257790