FIELD EFFECT TRANSISTOR WITH THIN GATE ELECTRODE AND METHOD OF FABRICATING SAME

• Main Authors: BRYANT ANDRES, CLARK WILLIAM F, NOWAK EDWARD JOSEPH, ANDERSON BRENT ALAN
• Format: Patent
• Language: English
• Published: 03.07.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A field effect transistor and a method of fabricating the field effect transistor. The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation; a source and a drain formed in the body and on opposite sides of a channel formed in the body; and a gate dielectric layer between the body and an electrically conductive gate electrode, a bottom surface of the gate dielectric layer in direct physical contact with a top surface of the body and a bottom surface the gate electrode in direct physical contact with a top surface of the gate dielectric layer, the gate electrode having a first region having a first thickness and a second region having a second thickness, the first region extending along the top surface of the gate dielectric layer over the channel region, the second thickness greater than the first thickness.