Transient enhanced atomic layer deposition
A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uni...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
05.06.2008
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Subjects | |
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Abstract | A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another. |
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AbstractList | A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another. |
Author | SEIDEL THOMAS E RAMANATHAN SASANGAN SRIVASTAVA ANURANJAN KIM GI YOUL LONDERGAN ANA R |
Author_xml | – fullname: RAMANATHAN SASANGAN – fullname: LONDERGAN ANA R – fullname: SRIVASTAVA ANURANJAN – fullname: KIM GI YOUL – fullname: SEIDEL THOMAS E |
BookMark | eNrjYmDJy89L5WTQCilKzCvOTM0rUUjNy0jMS05NUUgsyc_NTFbISaxMLVJISS3IL84syczP42FgTUvMKU7lhdLcDMpuriHOHrpAFfGpxQWJyal5qSXxocFGBgYWhsaGZgaGjobGxKkCAOk5K_U |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US2008131601A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2008131601A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:45:38 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2008131601A13 |
Notes | Application Number: US20040791334 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080605&DB=EPODOC&CC=US&NR=2008131601A1 |
ParticipantIDs | epo_espacenet_US2008131601A1 |
PublicationCentury | 2000 |
PublicationDate | 20080605 |
PublicationDateYYYYMMDD | 2008-06-05 |
PublicationDate_xml | – month: 06 year: 2008 text: 20080605 day: 05 |
PublicationDecade | 2000 |
PublicationYear | 2008 |
Score | 2.7100325 |
Snippet | A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | Transient enhanced atomic layer deposition |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080605&DB=EPODOC&locale=&CC=US&NR=2008131601A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTNMMgVKGOsmphqZ65okW5jpJlqYWegmAStDs1TjRJPEVFBH0dfPzCPUxCvCNIKJIQe2FwZ8Tmg5-HBEYI5KBub3EnB5XYAYxHIBr60s1k_KBArl27uF2LqowXrHFgbA5rmai5Ota4C_i7-zmrOzbWiwml8QWM7Q2BDY_XAE9pVYQQ1p0En7rmFOoH0pBciVipsgA1sA0Ly8EiEGptQ8YQZOZ9jda8IMHL7QKW8gE5r7ikUYtMAVC2gDo0JqXgZ46l4B2GfOzUxWyEkENp0VUlJha7BEGZTdXEOcPXSBIvFwP8aHBiO70FiMgQXY-0-VYFAwSwY2IFISLUEzXiZGwMBMSjNPTLQwSbFMTE5LNTSVZJDBZ5IUfmlpBi7IAggzXQNTGQaWkqLSVFlgLVuSJAcOHADWb4B1 |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsXp1ILSByG4rm3aPRRx7UrVtRuulb2VtE1xMOdwFf99r3HVPe0t3MGRHFzufrmPANzkSqIjQyWMdw2ipSYlzKQmSdAZUq4yjfESKPoB9SLtaapPazCvemHEnNBvMRwRLSpFey_Efb38f8RyRG3l6i6ZIenj3g0tR67QsdnB8Fx2-tZgPHJGtmzbVjSRgxfBU1QF4ccDYqUdA0GhAEuv_bIvZbnpVNwD2B2jvEVxCDW-aELDrv5ea8Kev05543JtfasjuBWOpWxglPjiTaTuJcTM77NUmjMMnaWMVzVYx3DtDkLbI0iJ_84YR5PNHaonUEf0z09BoikGEBnrlRkvrYvKTHKDMVPLeizNuaK3oL1N0tl29hU0vNAfxsPH4Pkc9n-LISjp6G2oF59f_AI9bpFcCkX9APzlg18 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Transient+enhanced+atomic+layer+deposition&rft.inventor=RAMANATHAN+SASANGAN&rft.inventor=LONDERGAN+ANA+R&rft.inventor=SRIVASTAVA+ANURANJAN&rft.inventor=KIM+GI+YOUL&rft.inventor=SEIDEL+THOMAS+E&rft.date=2008-06-05&rft.externalDBID=A1&rft.externalDocID=US2008131601A1 |