Method and system for tone inverting of residual layer tolerant imprint lithography

A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist layer. A portion of the cladding layer is used as a hard mask for a subsequent processing.

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Bibliographic Details
Main Authors VAN KESSEL THEODORE G, MARTIN YVES C, PFEIFFER DIRK, COLBURN MATTHEW E
Format Patent
LanguageEnglish
Published 22.05.2008
Subjects
APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
APPARATUS SPECIALLY ADAPTED THEREFOR
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MATERIALS THEREFOR
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
SPRAYING OR ATOMISING IN GENERAL
TRANSPORTING
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Summary:A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist layer. A portion of the cladding layer is used as a hard mask for a subsequent processing.
Bibliography:Application Number: US20060600140