SILICON WAFER ETCHING PROCESS AND COMPOSITION

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

Saved in:
Bibliographic Details
Main Authors STINSON MARK G, ERK HENRY F, ZHANG GUOQIANG (DAVID)
Format Patent
LanguageEnglish
Published 01.05.2008
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
AbstractList A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
Author ERK HENRY F
STINSON MARK G
ZHANG GUOQIANG (DAVID)
Author_xml – fullname: STINSON MARK G
– fullname: ERK HENRY F
– fullname: ZHANG GUOQIANG (DAVID)
BookMark eNrjYmDJy89L5WTQDfb08XT291MId3RzDVJwDXH28PRzVwgI8nd2DQ5WcPRzUXD29w3wD_YM8fT342FgTUvMKU7lhdLcDMpuIC26qQX58anFBYnJqXmpJfGhwUYGBhYGlpbmhuaOhsbEqQIAU3AoSg
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2008099717A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2008099717A13
IEDL.DBID EVB
IngestDate Fri Jul 19 13:04:49 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2008099717A13
Notes Application Number: US20080968381
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080501&DB=EPODOC&CC=US&NR=2008099717A1
ParticipantIDs epo_espacenet_US2008099717A1
PublicationCentury 2000
PublicationDate 20080501
PublicationDateYYYYMMDD 2008-05-01
PublicationDate_xml – month: 05
  year: 2008
  text: 20080501
  day: 01
PublicationDecade 2000
PublicationYear 2008
RelatedCompanies MEMC ELECTRONIC MATERIALS, INC
RelatedCompanies_xml – name: MEMC ELECTRONIC MATERIALS, INC
Score 2.7071059
Snippet A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating...
SourceID epo
SourceType Open Access Repository
SubjectTerms ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Title SILICON WAFER ETCHING PROCESS AND COMPOSITION
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080501&DB=EPODOC&locale=&CC=US&NR=2008099717A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT4MwEL8s06hvOjV-TEOi2RsRBmXwQMxWIM44SmDo3haKJTExbHEY_32vsOme9tb0mn5cer3e9XdXgHsjy99tDTcvEUaumnquqxkxuGrZmV5kfSKalPmT0HpKzecZmbXgcxMLU-cJ_amTI6JE5SjvVX1eL_-dWF6NrVw98A-sWjwGU9frbaxjWyNoG3sj14-Yx2iPUjdNemHc0BwHjZch2kp7eJEeSACY_zqScSnLbaUSHMN-hP2V1Qm0RNmBQ7r5e60DB5P1kzcW19K3OgU1Gb-MKQuVt2Hgx4o_pdLXpEQxo8hGZRh6CmWTiCVj6Xc6g7tANlFx3PnfMudpsj1J4xza5aIUF6A4g3ygm6QwDW5LR5itWdzMBeH9gluFpl1Cd1dPV7vJ13DUYCAkiK8L7errW9ygoq34bc2fX0UNfCM
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT4MwEL8s0zjfdGr8mEqi4Y0IgzL2sJitQIaOj4yheyOUQWJi2OIw_vte2dA97a3pNf249Hq9X--uAI9qki4MGTcvydRU0pRUkRKiMkk3EiVPuiTbpMx3PX0caS9zMm_AZx0LU-UJ_amSI6JEpSjvZXVer_5BLLPyrVw_sQ-sWj7bs4Ep1taxIRO0jc3RwAp806cipYMoFL3phtbvo_EyRFvpAC_ZBs-0b72NeFzKalep2CdwGGB_RXkKjaxoQ4vWf6-14cjdPnljcSt96zOQQmfiUN8T3oe2NRWsGeVYkxBMfYpsFIaeKVDfDfzQ4bjTOTzYvImE48Z_y4yjcHeS6gU0i2WRXYLQ76U9RSO5pjKDA2GGrDMtzQjr5kzPZfkKOvt6ut5PvofWeOZO4onjvd7A8cYfgjv0daBZfn1nt6h0S3ZX8eoXPyF_Ew
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SILICON+WAFER+ETCHING+PROCESS+AND+COMPOSITION&rft.inventor=STINSON+MARK+G&rft.inventor=ERK+HENRY+F&rft.inventor=ZHANG+GUOQIANG+%28DAVID%29&rft.date=2008-05-01&rft.externalDBID=A1&rft.externalDocID=US2008099717A1