TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implant...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
21.02.2008
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer. |
---|---|
AbstractList | Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer. |
Author | MUKA RICHARD STEPHEN HOLDEN SCOTT C ENGLAND JONATHAN GERALD |
Author_xml | – fullname: HOLDEN SCOTT C – fullname: MUKA RICHARD STEPHEN – fullname: ENGLAND JONATHAN GERALD |
BookMark | eNrjYmDJy89L5WQwC3F19vDzDAx1DVZw8w9SCHH1DXANcgwJDXLVdfb3Cwny9_FxdVHw9PdT8PQN8HH0C3EMAXJ4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgYGFgYmRgbmFo6ExcaoA9kIrFA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US2008042078A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2008042078A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 11:54:26 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2008042078A13 |
Notes | Application Number: US20070778335 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080221&DB=EPODOC&CC=US&NR=2008042078A1 |
ParticipantIDs | epo_espacenet_US2008042078A1 |
PublicationCentury | 2000 |
PublicationDate | 20080221 |
PublicationDateYYYYMMDD | 2008-02-21 |
PublicationDate_xml | – month: 02 year: 2008 text: 20080221 day: 21 |
PublicationDecade | 2000 |
PublicationYear | 2008 |
RelatedCompanies | VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC |
RelatedCompanies_xml | – name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC |
Score | 2.6872096 |
Snippet | Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080221&DB=EPODOC&locale=&CC=US&NR=2008042078A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8BhT1Dedih9TCkrfirZNa30YsqUZnXRtbVPZ22i7FgTphqv4971km-5pbyEHxyXk7nLfAPeOUZUkw8eL2ifTSOFUWl4YpWbkzmOlZ5aIE4psi8D2UvI6sSYt-NzUwsg-oT-yOSJyVIH83kh5vfh3Yrkyt3L5kH_g1vxlyHuuurGOReGorrqDHotCN6Qqpb00UYN4BSMGKsQ-2kp74iMtOu2z94GoS1lsK5XhMexHiK9uTqBV1h04pJvZax04GK9D3rhcc9_yFGzOqBeM3lKWKGi8KZyNIxbLxAWNhgGPQ99nroLSURmNI78fcOmAOoO7IePU05CA6d95p2myTa15Du16XpcXoJTk2Sa5GA9iFcTJZ5n9ZBaFaeuVSUSnu0vo7sJ0tRt8DUerZAhDM_QutJuv7_IGNW6T38qL-gWySn6H |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8BhTnG86FT-mFpS-FW2bdfVhyJZmdNovt1T2NtquBUG64Sr-fS_ZpnvaW8jBcQm5u9w3wL1tFDlJ8PGi9kk0ktmFlmZGrhmp_VjoSVvECUW2RWC5MXmZtCc1-NzUwsg-oT-yOSJyVIb8Xkl5vfh3Yjkyt3L5kH7g1vx5wLuOurGOReGorjr9LotCJ6Qqpd14rAajFYwYqBB7aCvtdUR_XvF5eu-LupTFtlIZHMF-hPjK6hhqedmEBt3MXmvCgb8OeeNyzX3LE7A4o24wfIvZWEHjTeHMj9hIJi5oNAz4KPQ85igoHZWhH3m9gEsH1CncDRinroYETP_OO43H29SaZ1Av52V-DkpOniySivEg7YzY6SyxOmaWmZZemER0uruA1i5Ml7vBt9Bwue9NvWHwegWHq8QIQzP0FtSrr-_8GrVvld7IS_sFxZSBdA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=TECHNIQUES+FOR+TEMPERATURE-CONTROLLED+ION+IMPLANTATION&rft.inventor=HOLDEN+SCOTT+C&rft.inventor=MUKA+RICHARD+STEPHEN&rft.inventor=ENGLAND+JONATHAN+GERALD&rft.date=2008-02-21&rft.externalDBID=A1&rft.externalDocID=US2008042078A1 |