Method of manufacturing a semiconductor integrated circuit device

• Main Authors: SALAMA C.ANDRE T, FUJISHIMA NAOTO
• Format: Patent
• Language: English
• Published: 27.12.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor integrated circuit (IC) device that integrates a TLPM (trench lateral power MOSFET) and one or more planar semiconductor devices on a semiconductor substrate. In manufacturing the semiconductor IC device according to one embodiment, a trench etching forms a...